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VLSI Fabrication Principles: Silicon and Gallium Arsenide by Sorab K. Ghandhi Book Details
| Book Name | VLSI Fabrication Principles: Silicon and Gallium Arsenide |
| Author | Sorab K. Ghandhi |
| Category | Electronics & Communication Engineering, Education Books |
| Book Language | English |
| Publisher | John Wiley & Sons |
| Pages | 433 |
| ISBN | 0471580058 |
| Country | India |
| Book Size | 39 MB |
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About VLSI Fabrication Principles: Silicon and Gallium Arsenide by Sorab K. Ghandhi Book
VLSI (Very Large Scale Integration) fabrication principles refer to the processes and techniques used to manufacture integrated circuits (ICs) on semiconductor substrates, such as silicon and gallium arsenide (GaAs). These principles involve a series of intricate steps to create the various components and connections that make up modern electronic devices.
Silicon Fabrication Principles:
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Crystal Growth: Silicon wafers are the starting material for most semiconductor devices. These wafers are created through the Czochralski process, where a silicon crystal is gradually pulled from a melt and sliced into thin wafers.
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Oxidation: A thin layer of silicon dioxide (SiO2) is grown on the wafer's surface through thermal oxidation. This oxide layer serves as an insulating material and a barrier for subsequent processes.
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Photolithography: A light-sensitive photoresist is coated onto the wafer, exposed to UV light through a photomask (a patterned plate), and then chemically developed. This process defines the circuit's pattern on the wafer.
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Etching: The exposed or unmasked areas of the photoresist are removed using etching techniques. This can be done using wet chemical etching or dry plasma etching.
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Doping: Dopants (impurities) are introduced into the silicon to modify its electrical properties. This is done by diffusing the dopants into the silicon or using ion implantation techniques.
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Deposition: Thin films of materials like metal or polysilicon are deposited onto the wafer's surface through techniques like chemical vapor deposition (CVD) or physical vapor deposition (PVD).
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Etching (Again): Additional etching steps are performed to selectively remove certain materials or layers, creating the desired shapes and connections.
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Annealing: High-temperature processes are used to activate dopants and heal any crystal defects caused by previous processing steps.
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Interconnect Formation: Insulating layers are deposited, and vias (vertical connections) and metal traces are created to interconnect different components on the chip.
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Packaging: Individual chips are separated from the wafer, tested, and then placed into packages with pins or solder balls for connection to external circuitry.
Gallium Arsenide Fabrication Principles: Gallium arsenide (GaAs) is another semiconductor material used for specialized applications, especially in high-frequency and high-speed devices.
The fabrication principles for GaAs are similar to those for silicon but involve different material properties and processing techniques:
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Crystal Growth: GaAs wafers are grown using methods like the Vertical Gradient Freeze (VGF) process or Liquid Encapsulated Czochralski (LEC) process.
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Photolithography, Etching, and Doping: Similar processes are used for defining patterns, etching, and introducing dopants into the GaAs wafers.
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Metallization: Metal contacts are deposited on the GaAs surface to create electrical connections.
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Ion Implantation: Ion implantation is a common technique to introduce dopants into GaAs since diffusion is less effective in GaAs compared to silicon.
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Dry Etching: Plasma etching is often used for GaAs due to its better selectivity and control over the etching process.
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High Electron Mobility Transistors (HEMTs): GaAs is well-known for its use in HEMTs, which are high-speed, high-frequency devices suitable for applications like wireless communication.
Both silicon and GaAs have their own advantages and disadvantages, making them suitable for different types of electronic devices. Silicon is widely used for its mature infrastructure and cost-effectiveness, while GaAs is favored for its high electron mobility and performance in high-frequency applications. The fabrication principles for both materials continue to evolve with advancements in semiconductor technology.
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